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| MITSUBISHI SEMICONDUCTOR GaAs FET MGF1801B MICROWAVE POWER GaAs FET DESCRIPTION The MGF1801B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic for microstrip circuits. package assures minimum parasitic losses, and has a configuration suitable OUTLINE DRAWING 4MIN. 1 Unit:millimeters 4MIN. 0.50.15 FEATURES * High output power at 1dB gain compression P1dB=23dBm(TYP.) * High linear power gain GLP=9dB(TYP.) * High reliability and stability @f=8GHz 0.50.15 3 @f=8GHz 2 2 APPLICATION S to X band medium-power amplifiers and oscillators. 2.50.2 QUALITY GRADE * IG RECOMMENDED BIAS CONDITIONS * VDS=6V * ID=100mA * Refer to Bias Procedure 1 GATE 2 SOURCE 3 DRAIN GD-10 ABSOLUTE MAXIMUM RATINGS (Ta=25C) Symbol VGDO VGSO ID IGR IGF PT Tch Tstg *1:TC=25C Parameter Gate to drain voltage Gate to source voltage Drain current Reverse gate current Forward gate current Total power dissipation Channel temperature Storage temperature *1 Ratings -8 -8 250 -0.6 1.5 1.2 175 -65 to +175 Unit V V mA mA mA W C C ELECTRICAL CHARACTERISTICS (Ta=25C) Symbol V(BR)GDO V(BR)GSO IGSS IDSS VGS(off) gm GLP P1dB Rth(ch-c) Parameter Gate to drain breakdown voltage Gate to source breakdown voltage Gate to source leakage current Saturated drain current Gate source cut-off voltage Transconductance Linear power gain Output power at 1dB gain compression Thermal resistance Test conditions IG=-200A IG=-200A VGS=-3V,VDS=0V VGS=0V,VDS=3V VDS=3V,ID=100A VDS=3V,ID=100mA VDS=6V,ID=100mA,f=8GHz VDS=6V,ID=100mA,f=8GHz *1 Vf method Min -8 -8 - 150 -1.5 70 7 21.8 - Limits Typ - - - 200 - 90 9 23.0 - Max - - 20 250 -4.5 - - - 125 Unit V V A mA V mS dB dBm C/W *1:Channel to ambient June/2004 MITSUBISHI SEMICONDUCTOR GaAs FET MGF1801B MICROWAVE POWER GaAs FET TYPICAL CHARACTERISTICS (Ta=25C) ID vs. VDS 200 VGS=-0.5V/step VGS=0V 100 0 0 2 4 6 8 10 DRAIN TO SOURCE VOLTAGE VDS(V) PO vs. Pin (f=8GHz) 30 ID=100mA 25 20 PO 15 10 15 10 Gain:10dB 8 6 42 30 ID=100mA 25 20 PO vs. Pin (f=12GHz) Gain:10dB 8 6 42 PO 5 0 -5 0 5 10 15 VDS=6V VDS=4V 20 25 5 0 -5 0 5 10 15 VDS=6V VDS=4V 20 25 INPUT POWER Pin(dBm) INPUT POWER Pin(dBm) June/2004 MITSUBISHI SEMICONDUCTOR GaAs FET MGF1801B MICROWAVE POWER GaAs FET S11 ,S22 vs. f. +j50 +j25 12.0GHz 0.5GHz +j10 +j250 +j100 S21 ,S12 vs. f. +90 S21 S12 0.5GHz 12.0GHz 0 25 12.0GHz 50 100 250 0.5GHz 180 6 5 4 3 2 1 0 0 12.0GHz I S21 I -j10 S11 -j25 S22 0.5GHz -j100 -j50 -j250 0.1 Ta=25C VDS=6V ID=100mA 0.2 -90 S PARAMETERS (Ta=25C,VDS=6V,ID=100mA) Freq. (GHz) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 Magn. 0.899 0.874 0.848 0.822 0.796 0.771 0.745 0.719 0.713 0.706 0.700 0.694 0.691 0.689 0.686 0.683 0.677 0.670 0.664 0.657 0.645 0.632 0.620 0.608 S11 Angle(deg.) -56.8 -69.4 -82.1 -94.7 -107.4 -120.0 -132.7 -145.3 -153.3 -161.3 -169.3 -177.3 176.9 171.1 165.2 159.4 153.1 146.9 140.6 134.3 127.8 121.3 114.8 108.3 Magn. 6.115 5.682 5.248 4.815 4.382 3.949 3.515 3.082 2.863 2.645 2.426 2.207 2.090 1.973 1.856 1.739 1.671 1.602 1.534 1.466 1.413 1.360 1.308 1.255 S21 Angle(deg.) 140.3 130.4 120.5 110.6 100.6 90.8 80.9 71.0 63.3 55.6 47.9 40.2 33.9 27.5 21.2 14.8 8.5 2.1 -4.3 -10.6 -17.0 -23.4 -29.7 -36.1 Magn. 0.047 0.049 0.050 0.052 0.054 0.056 0.057 0.059 0.060 0.062 0.063 0.064 0.068 0.073 0.077 0.081 0.089 0.096 0.104 0.111 0.118 0.126 0.133 0.140 S12 Angle(deg.) 52.1 49.3 46.4 43.6 40.8 38.0 35.1 32.3 33.3 34.3 35.2 36.2 37.6 39.0 40.4 41.8 40.5 39.3 38.0 36.7 33.2 29.8 26.3 22.8 Magn. 0.471 0.462 0.452 0.442 0.432 0.422 0.413 0.403 0.412 0.421 0.431 0.440 0.458 0.476 0.494 0.512 0.530 0.549 0.567 0.585 0.601 0.618 0.635 0.651 S22 Angle(deg.) -25.2 -32.7 -40.1 -47.5 -54.9 -62.4 -69.8 -77.2 -84.2 -91.1 -98.1 -105.0 -110.3 -115.5 -120.8 -126.0 -130.8 -135.5 -140.3 -145.0 -149.4 -153.9 -158.3 -162.7 K 0.371 0.394 0.431 0.485 0.558 0.657 0.789 0.964 1.006 1.064 1.142 1.245 1.202 1.172 1.153 1.146 1.072 1.011 0.962 0.922 0.893 0.867 0.844 0.823 MSG/MAG (dB) 21.2 20.7 20.2 19.7 19.1 18.5 17.9 17.2 16.3 14.8 13.6 12.4 12.1 11.8 11.5 11.0 11.1 11.6 11.7 11.2 10.8 10.4 9.9 9.5 June/2004 MITSUBISHI SEMICONDUCTOR MGF1801B MICROWAVE POWER GaAs FET MITSUBISHI ELECTRIC June/2004 |
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